Plasma Therm

About Plasma Therm

Plasma-Therm is a global manufacturer of plasma etch, deposition, and advanced packaging equipment for the specialty semiconductor and nanotechnology markets.

Since 1974, Plasma-Therm has been an innovator in plasma-processing technologies. The company now holds more than 150 U.S. and foreign patents for plasma processes and equipment inventions.

Plasma-Therm’s reputation as an industry leader is supported by more than 40 years of focus on customer support, product innovation, reliability, and low cost of ownership. The success of Plasma-Therm systems in both high-volume manufacturing environments and research institutions has secured the company’s status as a preferred supplier of plasma-process equipment. Plasma-Therm’s plasma-processing and advanced-packaging solutions are used in research, pilot manufacturing, and volume production.

Product

Plasma-Therm offers a range of technologies for etching and deposition of a variety of materials.

Plasma Etch

  • DSE — Deep Silicon Etch™ is a specialized form of ICP that combines etching and deposition in a time division multiplexed mode allowing for the production of deep straight-wall features in silicon and SOI substrates.
  • ICP — Inductively Coupled Plasma uses an RF powered coil in conjunction with an RF biased substrate electrode.
  • Photomask — Photomask etching systems are a specialized form of ICP processing that requires advanced control of parameters such as critical dimensions (CD).
  • RIE — Reactive Ion Etching uses a parallel plate configuration with an RF biased substrate electrode.

Ion Beam Etch

    • IBE — Ion beam etching uses a beam of accelerated ions for precise patterning and surface modification of any material, including metals. It is essentially a physical process, also referred to as “ion milling.”

Plasma Deposition

    • PECVD — Plasma Enhanced Chemical Vapor Deposition runs in parallel plate mode with RF power applied to the upper electrode.
    • HDPCVD — High Density Plasma Chemical Vapor Deposition combines the advantages of a high density plasma ICP source with PECVD, allowing for deposition at significantly lower temperatures and producing better, higher-density films.

Ion Beam Deposition

    • IBD — Ion beam deposition uses an ion beam to sputter material from a target for deposition on a substrate. IBD can form very thin films with superior uniformity.
      Plasma Dicing
    • Singulator® — Singulator systems use ICP-based etch configurations to enable full-wafer dicing of silicon, germanium and GaAs substrates on industry-standard tape frames.

Strip/Clean

    • HDRF™ — High Density Radical Flux is a highly efficient, downstream plasma technology for low-temperature stripping, residue removal, scallop smoothing, and surface activation before bonding.
    • NEO — Plasma technology for high temperature stripping at high etch rate.

Dry Release/Surface Modification

  • XERIC™ Dry Release Etching — memsstar’s XERIC dry release etch process module is available using vapor Hydrogen Fluoride (HF) and Exnon DiFluoride (XeF2).
  • AURIX™ Surface Modification — AURIX dry, vapor-phase SAM coatings offer major advantages over traditional wet chemical coatings. In particular, the vacuum deposition environment eliminates issues of moisture variation, crucial in creating repeatable and robust surface coatings.

Standard Certificates

SGS/ISO
CE/RoHs/FC/UL

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