Corial Plasma Therm – Corial 210D ICP-CVD system

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The Corial 210D ICP-CVD system is ideal for R&D centers, and offers a wide range of applications for the specialty semiconductor markets….

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The Corial 210D ICP-CVD system is ideal for R&D centers, and offers a wide range of applications for the specialty semiconductor markets.

The Corial 210D high density plasma system is based on CORIAL’s latest generation of 2 MHz helical ICP reactor. It is equipped with separate gas injection for SiH4 and dopants, to deposit high quality SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films at low temperature (<150°C)

High-temperature reactor walls supports short plasma cleaning times and low added particles.

Featuring a vacuum load lock, the Corial 210D delivers stable process conditions and short pump-down times.

Our COSMA Pulse software enables pulsed or time-multiplexed processes, to support applications ranging from deposition of super lattices for stress relief, to Atomic Layer Deposition films, all available on a conventional Corial 210D system.

A variety of substrate shapes and sizes, from wafer pieces to 150 mm wafers, can be processed in the Corial 210D ICP-CVD system.

Key Benefits

PROCESS FLEXIBILITY

The RF match box wide operating range (from 100 W to 2000 W) accommodates a wide range of customer applications in RIE, ICP-RIE, and ICP-CVD modes

The vacuum load lock enables using a combination of fluorinated and chlorinated chemistries in the same tool

BEST REPRODUCIBILITY

Load lock operation and heated chamber walls offer stable and repeatable process conditions

Novel cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control during deposition

BEST REPRODUCIBILITY

Load lock operation and heated chamber walls offer stable and repeatable process conditions

Novel cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control during deposition

HIGH UPTIME

The reactor’s heated walls enhance plasma cleaning efficiency and reduce cleaning requirements

Only 15 minutes are required to perform a reactor clean

Related processes

The Corial 210D can serve a variety of applications in specialty semiconductors markets including:

  • Advanced Packaging
  • Wireless Communication
  • R&D
Low temperature Silicon Dioxide (SiO2) ICPCVD deposition process

R&D

  • Deposition rate 140 nm/min
  • Refractive index 1.47
  • BOE etch rate < 110 nm/min
Fast Silicon Nitride (Si3N4) ICPCVD deposition process

Advanced packaging

  • Deposition rate 150 nm/min
  • Deposition temperature 70°C
  • Stress -100 ± 50 MPa
Fluorinated Silicon Oxide (SiOF) ICPCVD deposition for SAW devices passivation

Wireless Communication

  • Deposition rate 170 nm/min
  • Deposition temperature 70°C
  • Refractive index 1.42
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