Corial Plasma Therm – Corial 360RL RIE etch system

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With chrome and quartz etch capabilities, the Corial 360RL RIE system is ideally suited for mask repair. This product can….

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With chrome and quartz etch capabilities, the Corial 360RL RIE system is ideally suited for mask repair. This product can process mask sizes from 2” x 2” up to 8” x 8”, thanks to a wide array of substrate holders.

The 360RL design includes a large cathode that facilitates substrate loading, and enables high chromium etch rates together with high selectivity to the PR. The substrate holders are simply clamped on the cathode without the need for any screws or fasteners.

Equipped with a load lock, the Corial 360RL is capable of etching III-V compounds such as GaAs, GaP, GaN, and AlGaN, using chlorinated gases. The tool accommodates batch sizes of 7 X 4” or 3 X 6” wafers.

The Corial 360RL system can be upgraded with the next generation RIE process chamber, designed for etching and/or thin film sputtering, with any type of substrate up to 300 mm diameter.

Key Benefits


The RF match box operating range (from 100 W to 2000 W) supports a wide range of customer applications

The vacuum load lock enables using a combination of fluorinated and chlorinated chemistries in the same tool


Large area cathode facilitates substrate loading and results in high etch rates of III-V compounds and chrome

Fast RIE rates: Cr (50 nm/min), SiO2 (50 nm/min), and Si3N4 (60 nm/min)

Fast RIE sputter-etch rate of metals: (50 nm/min)


Cost-effective mask repair technology

Pumping system optimized for corrosive environment decreases maintenance requirement


Optimized helium backside cooling results in excellent process and wafer temperature control, and greater flexibility to process a wide range of materials

Vacuum load lock for stable and repeatable process conditions

Related processes

Typical materials that can be processed with the Corial 360RL RIE system include:
  • Chrome and quartz for photomask repair
  • Silicon and silicon-based compounds (SiO2, SiNx, Si)
  • Polymers: Polyimide, BCB, Photoresist
  • Metals: Au, Pt, Fe, Cu, PZT, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, NbN, Mo
Chrome (Cr) etch with RIE etch


  • Selectivity vs. quartz > 20:1
  • Etch rate 50 nm/min
  • Uniformity < ± 3%
Silicon Dioxide (SiO2) RIE etch


  • Etch depth 800 nm
  • Etch profile 88°
  • Etch rate 50 nm/min
Highly selective GaAs etch


  • Selectivity vs. PR mask > 6:1
  • Etch depth 1 µm
  • Etch rate 300 nm/min
Anisotropic GaN etch process


  • Uniformity ±5
  • Etch rate 200 nm/min
  • Selectivity vs. SiO2 mask > 5:1
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